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Maximum breakdown voltage. This work focuses on the application of mechanical stress to improve the performance of Lateral Diffusion MOSFET. The device behavior
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Experiments demonstrate that strain breaks the on-resistance/breakdown voltage tradeoff by enhancing on-resistance while maintaining breakdown voltage. There ar
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This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engi
Strain Effect in Semiconductors
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Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices
Lateral Power MOSFETs Hardened Against Single Event Radiation Effects
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The underlying physical mechanisms of destructive single event effects (SEE) from heavy ion radiation have been widely studied in traditional vertical double-di