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Language: en
Pages:
Pages:
Type: BOOK - Published: 2009 - Publisher:
Experiments demonstrate that strain breaks the on-resistance/breakdown voltage tradeoff by enhancing on-resistance while maintaining breakdown voltage. There ar
Language: en
Pages: 260
Pages: 260
Type: BOOK - Published: 2011-01-06 - Publisher: Springer Science & Business Media
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device desi
Language: en
Pages:
Pages:
Type: BOOK - Published: 2010 - Publisher:
Maximum breakdown voltage. This work focuses on the application of mechanical stress to improve the performance of Lateral Diffusion MOSFET. The device behavior
Language: en
Pages: 384
Pages: 384
Type: BOOK - Published: 2017-12-29 - Publisher: Springer
This volume comprises select papers from the International Conference on Microelectronics, Computing & Communication Systems(MCCS 2015). Electrical, Electronics
Language: en
Pages:
Pages:
Type: BOOK - Published: 2009 - Publisher:
A self-consistent solution to the Poisson and Schro umlautdinger's equation considering the strain Hamiltonian combined with the transfer matrix method are used