Download or read book Dielectric Cap Disordering of InGaAs Quantum Well Structures on InP and GaAs written by S. A. Bradshaw and published by . This book was released on 1992 with total page 2 pages. Available in PDF, EPUB and Kindle. Book excerpt: Many InGaAs Quantum Well (QW) structures have limited thermal stability and this limits the use of QW intermixing techniques. Rapid thermal processing (RTP) can overcome some of these restrictions. Here we report the use of RTP with dielectric capping layers Of SiO2 and Si3N4 to initiate QW intermixing in strained InGaAs on GaAs substrates and unstrained InGaAs on InP substrates. The first structure contained a single 90 A QW, with GaAs barriers with the wells under tension. The second structure contained four 100 A InGaAs quantum wells, with 120 InGaAsP barriers embedded in 0.18 micrometers InGaAsP guiding region. The InP based system also has 1 micrometer InP above the QW structure and a 0.17 micrometers layer of InGaAs. 1000A dielectric caps were deposited by plasma deposition on both sets of samples. To prevent Group Ill desorption during annealing proximity capping with either GaAs or InP was used throughout.