Dielectric Spectroscopy of Semiconductors: Interpretation of the Frequency Response of Trapping Processes in Semiconductors

Dielectric Spectroscopy of Semiconductors: Interpretation of the Frequency Response of Trapping Processes in Semiconductors
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Total Pages : 10
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ISBN-10 : OCLC:227716529
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Book Synopsis Dielectric Spectroscopy of Semiconductors: Interpretation of the Frequency Response of Trapping Processes in Semiconductors by : Andrew K. Jonscher

Download or read book Dielectric Spectroscopy of Semiconductors: Interpretation of the Frequency Response of Trapping Processes in Semiconductors written by Andrew K. Jonscher and published by . This book was released on 1987 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: The frequency dependence of trapping processes measured by the technique of Dielectric Spectroscopy of Semiconductors (DSS) reveals a ubiquitous and not generally recognized tendency to the universal fractional power laws, in complete contrast with Debye-like responses which would correspond to the normally expected exponential dependence on time. There is at present no accepted theory to account for this. We propose that one explanation may be found in a modification of our earlier model of screened hopping in which the presence of a localized electron at a trapping site affects the energy of that site through a screening process by a re-adjustment of the occupancy of other neigbouring sites. The screeningg determines the loss, while the transverse displacement of the electrons determines the polarization. Depending on the relative importance of these two processes, the exponent of the fractional power law may vary between almost zero, corresponding to very-low-loss frequency-independent behaviour at low frequencies, the so-called Low Frequency Dispersion (LFD), on the other. Electrochemical reactions may also play a role in certain interfacial processes. (Great Britain).


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