Download or read book Growth Development of III-Nitrides for Electronic Devices by Molecular Beam Epitaxy written by Erin Christina Hix Kyle and published by . This book was released on 2016 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: Immense work on the III-nitrides has taken place over the past quarter century. Nevertheless, many properties still remain poorly understood. Further knowledge and improvements of these materials will lead to superior device performance and realization of new device structures. In this work, III-nitrides were grown by molecular beam epitaxy and studied by multiple characterization techniques. Systematic studies examined the effect of different growth conditions on material properties of n-type GaN, p-type GaN and InAlN.